Micron Technology (NASDAQ:MU) announced on September 15, 2026, that it has demonstrated a 512GB DDR5 registered dual in-line memory module, or RDIMM, across multiple server platforms.
The company described the 512GB DDR5 RDIMM as the first module of its kind. It uses vertical interconnect packaging technology that stacks DRAM dies connected through through-silicon vias, or TSVs.
Micron said the module is designed to operate at speeds of up to 9,200 MT/s and could support as much as 12TB of DDR5 DRAM in a 24-slot, dual-socket server.
Micron Reports Lower Power Consumption
According to Micron, a single 512GB module consumes 16.0 watts of power, compared with 44.2 watts for four 128GB modules providing the same memory capacity.
The company said this represents a reduction in operating power of more than 60%.
Micron also said the module delivered up to 1.4 times higher performance on certain memory-bound analytics workloads compared with 256GB DDR5 configurations. The performance figures reflect Micron’s testing and may vary depending on workload and system configuration.
Raj Narasimhan, senior vice president and general manager of Micron’s Cloud Memory Business Unit, said, “A 512GB RDIMM enables multi-terabyte servers, supporting larger AI and database workloads, greater virtualization density and improved power efficiency, all within existing server footprints.”
AMD and Intel Validate Module for Future Servers
AMD and Intel are validating the 512GB RDIMM for potential use with next-generation server platforms.
Karin Eibschitz Segal, general manager of platform and system engineering in Intel’s Data Center Group, said Intel is working with Micron to validate the technology and support its use in future server platforms.
AMD corporate vice president Amit Goel also cited engineering collaboration between AMD and Micron involving compute and memory integration.
Micron expects the 512GB DDR5 RDIMM to enter volume production during the second half of 2027.
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